Journal Article Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma

Xu, Zhihao  ,  Gotoh, Kazuhiro  ,  Deng, Tianguo  ,  Sato, Takuma  ,  Takabe, Ryota  ,  Toko, Kaoru  ,  Usami, Noritaka  ,  Suemasu, Takashi

8 ( 5 )  , p.055306 , 2018-05 , American Institute of Physics
ISSN:2158-3226
Description
We studied the surface passivation effect of hydrogenated amorphous silicon (a-Si:H) layers on BaSi2 films. a-Si:H was formed by an electron-beam evaporation of Si, and a supply of atomic hydrogen using radio-frequency plasma. Surface passivation effect was first investigated on a conventional n-Si(111) substrate by capping with 20 nm-thick a-Si:H layers, and next on a 0.5 μm-thick BaSi2 film on Si(111) by molecular beam epitaxy. The internal quantum efficiency distinctly increased by 4 times in a wide wavelength range for sample capped in situ with a 3 nm-thick a-Si:H layer compared to those capped with a pure a-Si layer.
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