# Polarization modulation of nanotrenches in GaN (0001)/$(000\bar{1})$ by surface hydrogenation

56 ( 11 )  , p.111002 , 2017-10 , The Japan Society of Applied Physics
ISSN:0021-4922
NCID:AA12295836
Description
Using first-principles total-energy calculations within the framework of the density functional theory, we show that nanometer-scale trenches excavated in GaN with (0001) and $(000\bar{1})$ surfaces cause a variable electrostatic potential difference, which is tunable by controlling the hydrogen coverage of the surfaces. A positive potential difference of 3.53 V is induced between clean (0001) and $(000\bar{1})$ surfaces in nanotrenches, while a negative potential difference of −5.93 V is induced in nanotrenches with fully hydrogenated surfaces. The value of the potential difference strongly depends on the H coverage of the surfaces. Nanotrenches excavated in GaN with polar surfaces can supply electricity for various nanoscale devices consisting of molecules, clusters, and atoms inserted into the trenches.
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