学術雑誌論文 Carrier injection in nonbonding π states of N-doped graphene by an external electric field

Matsubara, Manaho  ,  Okada, Susumu

56 ( 7 )  , p.075101 , 2017-06 , The Japan Society of Applied Physics
ISSN:0021-4922
NII書誌ID(NCID):AA12295836
内容記述
Using the density functional theory combined with an effective screening medium method, we studied the electronic structure of N-doped graphene under an external electric field. The electronic states near the Fermi level depend on the carrier concentration reflecting their wave function distribution. The electronic states associated with the dangling bond shift upward with increasing electron concentration, following the upward shift of the Fermi level. The electronic states associated with nonbonding π states almost retain their energy upon hole/electron doping by the external electric field.
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