学術雑誌論文 Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon

Murata, H.  ,  Toko, K.  ,  Saitoh, N.  ,  Yoshizawa, N.  ,  Suemasu, T.

110 ( 3 )  , p.033108 , 2017-01 , American Institute of Physics
ISSN:0003-6951
NII書誌ID(NCID):AA00543431
内容記述
Multilayer graphene (MLG) growth on arbitrary substrates is desired for incorporating carbon wiring and heat spreaders into electronic devices. We investigated the metal-induced layer exchange growth of a sputtered amorphous C layer using Ni as a catalyst. A MLG layer uniformly formed on a SiO2 substrate at 600 °C by layer exchange between the C and Ni layers. Raman spectroscopy and electron microscopy showed that the resulting MLG layer was highly oriented and contained relatively few defects. The present investigation will pave the way for advanced electronic devices integrated with carbon materials.
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