学術雑誌論文 Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Okumura, Hironori  ,  Martin, Denis  ,  Grandjean, Nicolas

109 ( 25 )  , p.252101 , 2016-12 , American Institute of Physics
ISSN:0003-6951
NII書誌ID(NCID):AA00543431
内容記述
Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm−3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm−3 for which ρc is as low as 2 × 10−5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.
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