学術雑誌論文 Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment

Zhu, W.  ,  Mitchell, B.  ,  Timmerman, D.  ,  Uedono, A.  ,  Koizumi, A.  ,  Fujiwara, Y.

4 ( 5 )  , p.056103 , 2016-05 , AIP Publishing
ISSN:2166-532x
内容記述
The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power.
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