Journal Article p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%

Tsukahara, Daichi  ,  Yachi, Suguru  ,  Takeuchi, Hiroki  ,  Takabe, Ryota  ,  Du, Weijie  ,  Baba, Masakazu  ,  Li, Yunpeng  ,  Toko, Kaoru  ,  Usami, Noritaka  ,  Suemasu, Takashi

108 ( 15 )  , p.152101 , 2016-04 , American Institute of Physics
p-BaSi2/n-Si heterojunctionsolar cells consisting of a 20 nm thick B-doped p-BaSi2epitaxial layer (p = 2.2 × 1018 cm−3) on n-Si(111) (ρ = 1–4 Ω cm) were formed by molecular beam epitaxy. The separation of photogenerated minority carriers is promoted at the heterointerface in this structure. Under AM1.5 illumination, the conversion efficiency η reached 9.0%, which is the highest ever reported for solar cells with semiconducting silicides. An open-circuit voltage of 0.46 V, a short-circuit current density of 31.9 mA/cm2, and a fill factor of 0.60 were obtained. These results demonstrate the high potential of BaSi2 for solar cell applications.

Number of accesses :  

Other information