学術雑誌論文 Microscopic basis for the band engineering of Mo1−xWxS2-based heterojunction

Yoshida, Shoji  ,  Kobayashi, Yu  ,  Sakurada, Ryuji  ,  Mori, Shohei  ,  Miyata, Yasumitsu  ,  Mogi, Hiroyuki  ,  Koyama, Tomoki  ,  Takeuchi, Osamu  ,  Shigekawa, Hidemi

5p.14808 , 2015-10 , Nature Publishing Group
ISSN:2045-2322
内容記述
Transition-metal dichalcogenide layered materials, consisting of a transition-metal atomic layer sandwiched by two chalcogen atomic layers, have been attracting considerable attention because of their desirable physical properties for semiconductor devices, and a wide variety of pn junctions, which are essential building blocks for electronic and optoelectronic devices, have been realized using these atomically thin structures. Engineering the electronic/optical properties of semiconductors by using such heterojunctions has been a central concept in semiconductor science and technology. Here, we report the first scanning tunneling microscopy/spectroscopy (STM/STS) study on the electronic structures of a monolayer WS2/Mo1−xWxS2 heterojunction that provides a tunable band alignment. The atomically modulated spatial variation in such electronic structures, i.e., a microscopic basis for the band structure of a WS2/Mo1−xWxS2 heterojunction, was directly observed. The macroscopic band structure of Mo1−xWxS2 alloy was well reproduced by the STS spectra averaged over the surface. An electric field of as high as 80 × 106 Vm−1 was observed at the interface for the alloy with x = 0.3, verifying the efficient separation of photoexcited carriers at the interface.
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