学術雑誌論文 Mössbauer study on epitaxial Co x Fe4− x N films grown by molecular beam epitaxy

Ito, Keita  ,  Sanai, Tatsunori  ,  Yasutomi, Yoko  ,  Gushi, Toshiki  ,  Toko, Kaoru  ,  Yanagihara, Hideto  ,  Tsunoda, Masakiyo  ,  Kita, Eiji  ,  Suemasu, Takashi

117 ( 17 )  , p.17B717 , 2015-05 , American Institute of Physics
ISSN:0021-8979
NII書誌ID(NCID):AA00693547
内容記述
We prepared Co x Fe4− x N (x = 0, 1, 3) films on SrTiO3(STO)(001) substrates by molecular beam epitaxy. The epitaxial relationship with Co x Fe4− x N[100](001) | STO[100](001) was confirmed by ω-2θ (out-of-plane) and ϕ-2θχ (in-plane) x-ray diffraction (XRD) measurements. The degree of order of atoms (S) in the Co x Fe4− x N films was estimated to be ∼0.5 by the peak intensity ratio of Co x Fe4− x N(100) (superlattice diffraction line) to (400) (fundamental diffraction line) in the ϕ-2θχ XRD patterns. Conversion electron Mössbauer spectroscopy studies for the Co x Fe4− x N films revealed that some N atoms are located at interstitial sites between the two nearest corner sites in the Co x Fe4− x N films, and/or Fe atoms are located at both the corner and face-centered sites in the CoFe3N and Co3FeN films. In order to realize high spin-polarized Co x Fe4− x N films having large S, further optimization of growth condition is required to prevent the site-disorders.
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