紀要論文 The Density of States Spectrum for the Impurity Band in Highly-Compensated Heavily Arsenic-Doped n-Type Germanium

MATSUI, Makoto

67 ( 2 )  , pp.27 - 32 , 2017-02 , お茶の水女子大学
NII書誌ID(NCID):AN00033958
内容記述
The density of states spectrum for the impurity band is obtained by adopting a rigid band\picture and measuring the temperature dependence of the resistivity and the Hall effect for\highly- compensated heavily arsenic-doped n-type germanium crystals with initial donor\concentrations per cm^3 of 3.24 x 10^18, 3.32 x 10^18 and 5.20 x 10^18 and with various degrees\of compensation realized by thermal-neutron irradiation and isochronal anneals. Obtained\density of states decreases exponentially towards the inside of the energy gap, and the\density of states spectrum is essentially independent on the initial donor concentration.
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