Departmental Bulletin Paper <研究ノート>3次元トポロジカル絶縁体表面状態における電流誘起スピン偏極のゲート制御に関する研究
<Research Report>Gate-voltage manipulation of spin polarization in the surface state of three dimensional topological insulator

熊本, 涼平

27pp.19 - 26 , 2015-12 , 京都大学低温物質科学研究センター
The surface state of three-dimensional topological insulators represents a new quantum state characterized by topologically protected metallic state. In the surface state of topological insulators, it is expected that the spin direction of the carriers is perpendicularly locked to the carrier momentum (spin-momentum locking). Due to the spin-momentum locking, a charge current naturally induces spin polarization. Recently, we reported successful detection of the local magnetoresistance due to the spin-momentum locking by using a ferromagnetic Ni[80]Fe[20](Py) film/a bulk-insulating TI, Bi[1.5]Sb[0.5]Te[1.7]Se[1.3] (BSTS) interface. Here we report on gate-voltage manipulation of the local magnetoresistance.

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