Journal Article Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis.

Hinuma, Yoyo  ,  Hatakeyama, Taisuke  ,  Kumagai, Yu  ,  Burton, Lee A  ,  Sato, Hikaru  ,  Muraba, Yoshinori  ,  Iimura, Soshi  ,  Hiramatsu, Hidenori  ,  Tanaka, Isao  ,  Hosono, Hideo  ,  Oba, Fumiyasu

72016-06-21 , Nature Publishing Group
希少元素を使わずに赤く光る新窒化物半導体を発見-マテリアルズ・インフォマティクスと実験の連携による成果-. 京都大学プレスリリース. 2016-06-28.
Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn[2]N[2] that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca[2]ZnN[2], Ba[2]ZnN[2] and Zn[2]PN[3], which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications.

Number of accesses :  

Other information