Journal Article Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene

Dushenko, S.  ,  Ago, H.  ,  Kawahara, K.  ,  Tsuda, T.  ,  Kuwabata, S.  ,  Takenobu, T.  ,  Shinjo, T.  ,  Ando, Y.  ,  Shiraishi, M.

116 ( 16 ) 2016-04-21 , American Physical Society
ISSN:1079-7114
NCID:AA00773679
Description
次世代スピントロニクス材料であるグラフェンにおいてスピンを電圧に変換する新しい機能を発見. 京都大学プレスリリース. 2016-05-18.
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.
Full-Text

http://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/212049/1/PhysRevLett.116.166102.pdf

Number of accesses :  

Other information