Journal Article Individual identification of free hole and electron dynamics in CuIn[1-x]Ga[x]Se[2] thin films by simultaneous monitoring of two optical transitions

Okano, Makoto  ,  Hagiya, Hideki  ,  Sakurai, Takeaki  ,  Akimoto, Katsuhiro  ,  Shibata, Hajime  ,  Niki, Shigeru  ,  Kanemitsu, Yoshihiko

106 ( 18 ) 2015-05-06 , AIP Publishing
The photocarrier dynamics of CuIn[1−x]Ga[x]Se[2] (CIGS) thin films were studied using white-light transient absorption (TA) measurements, as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the splitting of the valance bands in the CIGS was observed in the TA spectra under near-band-gap resonant excitation. From a comparison of the TA decay dynamics monitored at these two peaks, it was found that the slow-decay components of the electron and hole relaxation are on the nanosecond timescale. This finding is clear evidence of the long lifetimes of free photocarriers in polycrystalline CIGS thin films.

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