学術雑誌論文 Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells

Funato, Mitsuru  ,  Banal, Ryan G.  ,  Kawakami, Yoichi

5 ( 11 ) 2015-11-06 , AIP Publishing
ISSN:2158-3226
内容記述
Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.
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http://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/207642/1/1.4935567.pdf

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