学術雑誌論文 Fabrication of ZnSnP(2) thin films by phosphidation

Nakatsuka, S.  ,  Nose, Y.  ,  Uda, T.

589pp.66 - 71 , 2015-08 , Elsevier B.V.
ISSN:0040-6090
NII書誌ID(NCID):AA00863068
内容記述
ZnSnP(2) is a promising candidate as a solar absorbing material consisting of earth-abundant and low-toxic elements. In this study, the phosphidation method, where co-sputtered Zn–Sn thin films react with phosphorus gas, was adopted for fabricating ZnSnP(2) thin films. To establish the conditions for producing ZnSnP(2) thin films, we investigated the influence of phosphidation temperature on the product phases, and interpreted the experimental results using chemical potential diagrams of the Zn–Sn–P system. ZnSnP(2) thin films with a single phase were obtained by phosphidation at 500 °C under a phosphorus vapor pressure of 10[−2] atm. However, formation of ZnSnP(2)protrusions was observed on the surface of the thin films. Based on the experimental results and the chemical potential diagrams, it is indicated that un-reacted liquid Sn particles reacted with Zn and phosphorus gas to form ZnSnP(2) protrusions in a manner similar to the vapor-Liquid-Solid growth mode.
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http://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/202615/1/j.tsf.2015.04.020.pdf

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