学術雑誌論文 Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells

Kada, T.  ,  Asahi, S.  ,  Kaizu, T.  ,  Harada, Y.  ,  Kita, T.  ,  Tamaki, R.  ,  Okada, Y.  ,  Miyano, K.

91 ( 20 )  , p.201303 , 2015-05-18 , American Physical Society (APS)
ISSN:109801211550235X
内容記述
We studied the two-step photon absorption (TSPA) process in InAs/GaAs quantum-dot superlattice (QDSL) solar cells. TSPA of subband-gap photons efficiently occurs when electrons are pumped from the valence band to the states above the inhomogeneously distributed fundamental states of QDSLs. The photoluminescence (PL)-excitation spectrum demonstrates an absorption edge attributed to the higher excited states of the QDSLs in between the InAs wetting layer states and the fundamental states of QDSLs. When the absorption edge of the excited state was resonantly excited, the superlinear excitation power dependence of the PL intensity demonstrated that the electron and hole created by the interband transition separately relax into QDSLs. Furthermore, time-resolved PL measurements demonstrated that the electron lifetime is extended by thereby inhibiting recombination with holes, enhancing the second subband-gap absorption.
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http://www.lib.kobe-u.ac.jp/repository/90004060.pdf

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