Journal Article Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

Chiba, Kohei  ,  Tomioka, Katsuhiro  ,  Yoshida, Akinobu  ,  Motohisa, Junichi

7 ( 12 )  , p.125304 , 2017-12 , American Institute of Physics (AIP)
ISSN:2158-3226
Description
Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a mu m-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio. (c) 2017 Author(s).
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