学術雑誌論文 Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures

Chen, S. L.  ,  Kiba, T.  ,  Yang, X. J.  ,  Takayama, J.  ,  Murayama, A.

119 ( 11 )  , pp.115701-1 - 115701-5 , 2016-03-22 , American Institute of Physics (AIP)
ISSN:0021-8979
内容記述
Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5-180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interaction with random nuclear field. (C) 2016 AIP Publishing LLC.
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http://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/64773/1/1.4944039.pdf

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