Journal Article One electron-controlled multiple-valued dynamic random-access-memory

Kye, H. W.  ,  Song, B. N.  ,  Lee, S. E.  ,  Kim, J. S.  ,  Shin, S. J.  ,  Choi, J. B.  ,  Yu, Y. -S.  ,  Takahashi, Y.

6 ( 2 )  , pp.025320-1 - 025320-5 , 2016-02 , American Institute of Physics (AIP)
We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET). The gate of a SET is designed to be connected to a plurality of DRAM unit cells that are arrayed at intersections of word lines and bitlines. In this SET-DRAM hybrid scheme, the multiple switching characteristics of SET enables multiple value data stored in a DRAM unit cell, and this increases the storage functionality of the device. Moreover, since refreshing data requires only a small amount of SET driving current, this enables device operating with low standby power consumption. (C) 2016 Author(s).

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