||In Situ Transmission Electron Microscopy for Electronics
Arita, Masashi ,
Hamada, Kouichi Takahashi, Yasuo ,
Sueoka, Kazuhisa ,
68 , 2015-09-02 , InTech
Electronic devices are strongly influenced by their microstructures. In situ transmission electron microscopy (in situ TEM) with capability to measure electrical properties is an effective method to dynamically correlate electric properties with microstructures.
We have developed tools and in situ TEM experimental procedures for measuring electronic devices, including TEM sample holders and sample preparation methods. The method was used to study metallic nanowire by electromigration, magnetoresistance of a ferromagnetic device, conductance quantization of a metallic nanowire, single electron tunnelling, and operation details of resistive random access memories (ReRAM).
Masashi Arita, Kouichi Hamada, Yasuo Takahashi, Kazuhisa Sueoka and Tamaki Shibayama (2015). In Situ Transmission Electron Microscopy for Electronics, The Transmission Electron Microscope - Theory and Applications, Dr. Khan Maaz (Ed.), ISBN: 978-953-51-2150-3, InTech, DOI: 10.5772/60651. Available from: http://www.intechopen.com/books/the-transmission-electron-microscope-theory-and-applications/in-situ-transmission-electron-microscopy-for-electronics