学術雑誌論文 Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices

Thendie, Boanerges  ,  Omachi, Haruka  ,  Hirotani, Jun  ,  Ohno, Yutaka  ,  Miyata, Yasumitsu  ,  Shinohara, Hisanori

56 ( 6 )  , pp.065102 - 065102 , 2017-06 , IOP publishing
ISSN:0021-4922
内容記述
Large-diameter semiconductor single-wall carbon nanotubes (s-SWCNTs) have superior mobility and conductivity to small-diameter s-SWCNTs. However, the purification of s-SWCNTs with diameters larger than 1.6 nm by gel filtration has been difficult owing to the low selectivity of the conventional purification method in these large-diameter regions. We report a combination of temperature-controlled gel filtration and the gradient elution technique that we developed to enrich a high-purity s-SWCNT with a diameter as large as 1.9 nm. The thin-film transistor (TFT) device using the 1.9-nm-diameter SWCNT shows an average channel mobility of 23.7 cm2V^−1s^−1, which is much higher than those of conventional SWCNT-TFTs with smaller-diameters of 1.5 and 1.4 nm.
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