Journal Article High-density formation of Ta nanodot induced by remote hydrogen plasma

Wang, Yaping  ,  Takeuchi, Daichi  ,  Ohta, Akio  ,  Ikeda, Mitsuhisa  ,  Makihara, Katsunori  ,  Miyazaki, Seiichi

56 ( 1S )  , pp.01AE01 - 01AE01 , 2017-01 , IOP publishing
We have studied the formation of Ta nanodots (NDs) on thermally grown SiO2/Si by exposing a thin metal layer to a remote H2 plasma (H2-RP) without external heating. Atomic force microscopy (AFM) analyses show that a combination of a Ge (~30.0 nm)/Ta (~2.0 nm) bilayer stack with subsequent H2-RP exposure is effective for forming electrically isolated Ta NDs with an areal dot density as high as ~1011 cm−2, where the Ge layer plays an important role as a barrier layer against the oxidation of the ultrathin Ta layer surface. The change in the chemical structure of the Ge/Ta bilayer stack on SiO2/Si upon Ta ND formation by H2-RP exposure is investigated by hard X-ray photoemission spectroscopy (HAXPES) and X-ray photoelectron spectroscopy (XPS).

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