Departmental Bulletin Paper Numerical analysis of dislocation density and residual strain in multicrystalline silicon for solar cells using experimental verification

Nakano, Satoshi  ,  Gao, Bing  ,  Jiptner, Karolin  ,  Harada, Hirofumi  ,  Miyamura, Yoshiji  ,  Sekiguchi, Takashi  ,  Fukuzawa, Masayuki  ,  Kakimoto, Koichi

150pp.1 - 5 , 2016-03 , Research Institute for Applied Mechanics, Kyushu University
ISSN:1345-5664
NCID:AA11459359
Description
A three-dimensional (3D) Haasen-Alexander-Sumino model (HAS model) has been developed to study the dislocation density and residual strain in the crystal. We compared the difference between calculation results and experimental results. The results show that the HAS model can evaluate the dislocation density and residual strain in the crystal semiquantitatively. And the residual strain for a multicrystal is lower than that for a mono-like crystal. In the case of mono-like crystal, the dislocation generation is small and the thermal stress cannot relax easily, then residual strain is high. In the case of the multicrystal, the dislocation generation is large and there are so many grains, then the thermal stress can relax easily and residual strain is low.
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http://catalog.lib.kyushu-u.ac.jp/handle/2324/1660355/p001.pdf

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